MRF7S21110HSR3
RF MOSFET LDMOS 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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The NXP USA Inc. MRF7S21110HSR3 is an RF MOSFET designed for high-power applications. This LDMOS device operates with a 28V test voltage and a 1.1A test current, delivering 33W of output power at 2.17GHz. It features a gain of 17.3dB, making it suitable for demanding RF power amplification stages. The component is housed in an NI-780S package, designed for chassis mounting and supplied on tape and reel. This device finds application in base stations and broadcast transmitters, offering robust performance for critical wireless infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780S |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2.17GHz |
| Power - Output | 33W |
| Gain | 17.3dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780S |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 1.1 A |
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