MRF7S19210HSR3
RF MOSFET LDMOS 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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The NXP USA Inc. MRF7S19210HSR3 is a high-performance RF power transistor utilizing LDMOS technology. This device is engineered for demanding applications in wireless infrastructure and base stations, operating efficiently at 1.99 GHz. It delivers a robust 63W of output power with a typical gain of 20dB. The transistor is designed for a 28V test voltage and a 65V rated voltage, with a test current of 1.4A. Packaged in the NI-780S configuration, it is supplied on tape and reel for automated assembly processes. The chassis mount design facilitates integration into robust thermal management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780S |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 1.99GHz |
| Power - Output | 63W |
| Gain | 20dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780S |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 1.4 A |
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