MRF7S18125BHSR5
RF MOSFET LDMOS 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF7S18125BHSR5 RF power transistor utilizes LDMOS technology for high-performance applications. This device delivers 125W of output power at a frequency of 1.93GHz with a typical gain of 16.5dB. It is rated for 65V with a test voltage of 28V and a test current of 1.1A. The MRF7S18125BHSR5 features a NI-780S package designed for chassis mounting and is supplied in Tape & Reel (TR) packaging. This component is commonly employed in base station infrastructure and other high-power RF systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780S |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 1.93GHz |
| Power - Output | 125W |
| Gain | 16.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780S |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 1.1 A |
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