MRF7S18125BHSR3
RF MOSFET LDMOS 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF7S18125BHSR3 is a high-power RF LDMOS transistor designed for demanding wireless infrastructure applications. This device operates at a 28V test voltage and delivers 125W of output power at 1.93GHz, featuring a typical gain of 16.5dB. The MRF7S18125BHSR3 is packaged in the NI-780S, a robust configuration suitable for chassis mounting and supplied on tape and reel. Its LDMOS technology ensures excellent linearity and efficiency, making it ideal for power amplifier stages in cellular base stations and other high-frequency communication systems. The current rating at test conditions is 1.1A.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780S |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 1.93GHz |
| Power - Output | 125W |
| Gain | 16.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780S |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 1.1 A |
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