MRF7S18125AHSR3
RF MOSFET LDMOS 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF7S18125AHSR3 is a high-power LDMOS RF power transistor designed for demanding wireless applications. This device operates at 1.88 GHz, delivering 125W of output power with a typical gain of 17dB. It is specified for a test voltage of 28V and a rated voltage of 65V, handling a test current of 1.1A. The MRF7S18125AHSR3 is packaged in the NI-780S, suitable for chassis mounting and supplied on tape and reel. Its robust performance makes it suitable for base station infrastructure and other high-frequency power amplifier designs in the wireless communications industry.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780S |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 1.88GHz |
| Power - Output | 125W |
| Gain | 17dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780S |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 1.1 A |
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