MRF7P20040HR5
RF MOSFET LDMOS 32V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF7P20040HR5 is a high-power RF LDMOS transistor designed for demanding applications. This device operates at a frequency of 2.03 GHz, delivering a power output of 10W with a gain of 18.2 dB. It features a 32V test voltage and a rated voltage of 65V, with a test current of 150 mA. The MRF7P20040HR5 is housed in a NI-780-4 package, suitable for chassis mounting, and is supplied on a tape and reel for automated assembly. This RF FET is commonly employed in base station infrastructure and other wireless communication systems requiring robust RF performance.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780-4 |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2.03GHz |
| Configuration | Dual |
| Power - Output | 10W |
| Gain | 18.2dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780-4 |
| Voltage - Rated | 65 V |
| Voltage - Test | 32 V |
| Current - Test | 150 mA |