MRF6VP3091NR5
RF MOSFET LDMOS 50V TO272-4Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF6VP3091NR5 is a high-power RF MOSFET designed for demanding applications. This LDMOS device operates at 50V with a test current of 350 mA, delivering a power output of 18W at 860MHz. Featuring a gain of 22dB, it is engineered for efficient signal amplification. The component is housed in a TO-272 WB-4 package, suitable for chassis mounting and supplied on tape and reel. Its robust construction and performance characteristics make it ideal for use in base station infrastructure, broadcast transmitters, and industrial RF heating systems. This device utilizes advanced LDMOS technology for superior linearity and efficiency.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-272BB |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 860MHz |
| Configuration | Dual |
| Power - Output | 18W |
| Gain | 22dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | TO-272 WB-4 |
| Voltage - Rated | 115 V |
| Voltage - Test | 50 V |
| Current - Test | 350 mA |
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