MRF6VP2600HR6
RF MOSFET LDMOS 50V NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF6VP2600HR6 is a high-power RF MOSFET utilizing LDMOS technology. This dual-channel device is rated for 50V test voltage and delivers 125W of output power at 225MHz. It features a 25dB gain and a 2.6A test current. The MRF6VP2600HR6 is packaged in a NI-1230 configuration and supplied on tape and reel (TR). This component is commonly employed in industrial and commercial applications requiring robust RF power amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-1230 |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 225MHz |
| Configuration | Dual |
| Power - Output | 125W |
| Gain | 25dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230 |
| Voltage - Rated | 110 V |
| Voltage - Test | 50 V |
| Current - Test | 2.6 A |
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