MRF6VP2600HR5
RF MOSFET LDMOS 50V NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF6VP2600HR5 is a high-power RF power MOSFET utilizing LDMOS technology. This component is rated for 50V test voltage and delivers 125W of output power at 225MHz with a typical gain of 25dB. The device is configured as a dual FET and is supplied in the NI-1230 package, suitable for chassis mounting. It is provided on tape and reel for automated assembly. This RF power amplifier component is commonly employed in base station infrastructure, industrial heating, and other high-frequency power applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-1230 |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 225MHz |
| Configuration | Dual |
| Power - Output | 125W |
| Gain | 25dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230 |
| Voltage - Rated | 110 V |
| Voltage - Test | 50 V |
| Current - Test | 2.6 A |
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