MRF6VP21KHR6
RF MOSFET LDMOS 50V NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF6VP21KHR6 is a high-power RF LDMOS transistor designed for demanding applications. This dual-die device operates at 225MHz, delivering 1000W of output power with a typical gain of 24dB. Engineered for robust performance, it features a 50V test voltage and a 150mA test current. The NI-1230 package, suitable for chassis mounting, ensures efficient thermal management. This component is a key element in base station infrastructure, industrial heating, and high-power RF systems. The MRF6VP21KHR6 is supplied on a Tape & Reel (TR) for automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-1230 |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 225MHz |
| Configuration | Dual |
| Power - Output | 1000W |
| Gain | 24dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230 |
| Voltage - Rated | 110 V |
| Voltage - Test | 50 V |
| Current - Test | 150 mA |
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