MRF6VP121KHSR5
RF MOSFET LDMOS 50V NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF6VP121KHSR5 is a high-power RF LDMOS transistor designed for demanding applications. This device operates at 1.03GHz, delivering a 20dB gain and a substantial 1000W output power. It is specified with a 50V test voltage and 150mA test current, utilizing NXP's advanced LDMOS technology for robust performance. Packaged in the NI-1230S configuration and supplied on tape and reel, the MRF6VP121KHSR5 is suitable for power amplification in base station infrastructure, radar systems, and other high-frequency communication equipment. Its dual configuration and high power handling capabilities make it a key component for advanced RF designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-1230S |
| Current Rating (Amps) | - |
| Frequency | 1.03GHz |
| Configuration | Dual |
| Power - Output | 1000W |
| Gain | 20dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230S |
| Voltage - Rated | 110 V |
| Voltage - Test | 50 V |
| Current - Test | 150 mA |
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