MRF6V2300NBR5
RF MOSFET LDMOS 50V TO272-4Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF6V2300NBR5 is a high-power RF MOSFET utilizing LDMOS technology. Designed for demanding RF power amplifier applications, this component operates at 220MHz with a 50V test voltage and delivers 300W of output power. Key performance metrics include a gain of 25.5dB and a current rating of 900mA at test conditions. The device is supplied in a TO-272 WB-4 package, suitable for chassis mounting and provided on tape and reel (TR) for high-volume manufacturing. This RF power transistor is commonly specified in broadband communication systems and industrial RF heating applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-272BB |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 220MHz |
| Power - Output | 300W |
| Gain | 25.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | TO-272 WB-4 |
| Voltage - Rated | 110 V |
| Voltage - Test | 50 V |
| Current - Test | 900 mA |