MRF6V2300NBR1
RF MOSFET LDMOS 50V TO272-4Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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The NXP USA Inc. MRF6V2300NBR1 is a high-power RF MOSFET utilizing LDMOS technology, designed for demanding applications. This component offers 300W of output power at a 220MHz frequency, with a typical gain of 25.5dB. It is rated for 110V operation and tested at 50V, with a continuous drain current of 900mA. The TO-272 WB-4 package is suitable for chassis mounting and is supplied on a Tape & Reel (TR). This device finds application in base station infrastructure and professional mobile radio systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-272BB |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 220MHz |
| Power - Output | 300W |
| Gain | 25.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | TO-272 WB-4 |
| Voltage - Rated | 110 V |
| Voltage - Test | 50 V |
| Current - Test | 900 mA |
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