MRF6V2010NR1
RF MOSFET LDMOS 50V TO270-2Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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The NXP USA Inc. MRF6V2010NR1 is a high-performance RF LDMOS transistor designed for demanding radio frequency applications. This component features a 50V drain-source voltage rating and delivers 10W of output power at 220MHz, with a typical gain of 23.9dB at 30mA test current. Its TO-270-2 package provides robust thermal performance suitable for surface mount applications. This device is engineered for linear power amplification in base station infrastructure, broadcast transmitters, and other high-power RF systems. The MRF6V2010NR1 is supplied on a Tape & Reel for automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-270AA |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 220MHz |
| Power - Output | 10W |
| Gain | 23.9dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | TO-270-2 |
| Voltage - Rated | 110 V |
| Voltage - Test | 50 V |
| Current - Test | 30 mA |
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