MRF6V2010NBR5
RF MOSFET LDMOS 50V TO272-2Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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The NXP USA Inc. MRF6V2010NBR5 is a high-performance RF power transistor utilizing LDMOS technology. This component is designed for demanding RF applications, offering 10W of output power at a test frequency of 220MHz. With a rated voltage of 110V and a test voltage of 50V, it provides robust performance for power amplification stages. The device exhibits a gain of 23.9dB under specified test conditions (30mA current). Supplied in a TO-272-2 package, it is suitable for chassis mounting and comes in tape and reel packaging for efficient automated assembly. This RF MOSFET finds application in various industries, including industrial and commercial communications, as well as broadcast equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-272BC |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 220MHz |
| Power - Output | 10W |
| Gain | 23.9dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | TO-272-2 |
| Voltage - Rated | 110 V |
| Voltage - Test | 50 V |
| Current - Test | 30 mA |
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