MRF6V2010NBR1
RF MOSFET LDMOS 50V TO272-2Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF6V2010NBR1 is a 50V LDMOS RF power transistor designed for high-frequency applications. This component delivers 10W of output power at a test current of 30 mA and a frequency of 220MHz, with a typical gain of 23.9dB. Featuring LDMOS technology, it offers robust performance for demanding RF power amplification. The MRF6V2010NBR1 is supplied in a TO-272-2 package, suitable for chassis mounting and delivered on tape and reel. This device finds application in various industrial and commercial RF power systems where efficiency and reliability are paramount.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-272BC |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 220MHz |
| Power - Output | 10W |
| Gain | 23.9dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | TO-272-2 |
| Voltage - Rated | 110 V |
| Voltage - Test | 50 V |
| Current - Test | 30 mA |
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