MRF6V2010GNR5
RF MOSFET LDMOS 50V TO270G-2Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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The NXP USA Inc. MRF6V2010GNR5 is a high-performance RF MOSFET utilizing LDMOS technology. This device offers a 50V test voltage and 23.9dB gain at 220MHz, delivering up to 10W of output power. Designed for demanding RF applications, it is supplied in a TO-270G-2 package, presented on tape and reel (TR). Its robust construction and specified performance characteristics make it suitable for use in industrial and communication infrastructure, where reliable high-frequency power amplification is critical. The MRF6V2010GNR5 is engineered for efficiency and linearity in power amplifier designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-270BA |
| Current Rating (Amps) | - |
| Frequency | 220MHz |
| Power - Output | 10W |
| Gain | 23.9dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | TO-270G-2 |
| Voltage - Rated | 110 V |
| Voltage - Test | 50 V |
| Current - Test | 30 mA |
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