MRF6V2010GNR1
RF MOSFET LDMOS 50V TO270G-2Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF6V2010GNR1 is a high-performance RF power MOSFET utilizing LDMOS technology. This device is designed for demanding RF applications, delivering 10W of output power at a test frequency of 220MHz. It features a gain of 23.9dB and operates with a drain current of 30mA at a test voltage of 50V. The MRF6V2010GNR1 is packaged in a TO-270G-2, suitable for automated assembly via tape and reel. This component is frequently deployed in industrial, medical, and communication systems requiring robust RF power amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-270BA |
| Current Rating (Amps) | - |
| Frequency | 220MHz |
| Power - Output | 10W |
| Gain | 23.9dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | TO-270G-2 |
| Voltage - Rated | 110 V |
| Voltage - Test | 50 V |
| Current - Test | 30 mA |
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