MRF6V12500HSR3
RF MOSFET LDMOS 50V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. MRF6V12500HSR3 is a high-power RF MOSFET designed for demanding applications. This LDMOS device operates at 1.03 GHz, delivering 500W of output power with a typical gain of 19.7dB. The MRF6V12500HSR3 is rated for 110V operation and is tested at 50V with a 200mA current. Featuring the NI-780S package, this component is suitable for chassis mounting. The MRF6V12500HSR3 finds application in base station infrastructure and other high-frequency power amplification systems. It is supplied on tape and reel for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780S |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 1.03GHz |
| Power - Output | 500W |
| Gain | 19.7dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780S |
| Voltage - Rated | 110 V |
| Voltage - Test | 50 V |
| Current - Test | 200 mA |
Request a Quote
Clients Also Buy
MRF6S19200HSR5
RF MOSFET LDMOS 28V NI780
MRF1513NT1
RF MOSFET LDMOS 12.5V PLD-1.5
AFG24S100HR5
RF MOSFET LDMOS NI360
