MRF6V10250HSR3
RF MOSFET LDMOS 50V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc.'s MRF6V10250HSR3 is a 1.09GHz RF power MOSFET utilizing LDMOS technology. This device delivers 250W of output power with a gain of 21dB at a test current of 250mA. Designed for high-power applications, it operates with a rated voltage of 100V and a test voltage of 50V. The MRF6V10250HSR3 is housed in a NI-780S package and supplied on tape and reel. Its capabilities make it suitable for use in base station infrastructure and other demanding RF power amplifier designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780S |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 1.09GHz |
| Power - Output | 250W |
| Gain | 21dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780S |
| Voltage - Rated | 100 V |
| Voltage - Test | 50 V |
| Current - Test | 250 mA |
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