MRF6S9130HR3
RF MOSFET LDMOS 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. MRF6S9130HR3, an RF LDMOS transistor, delivers 27W of output power at 880MHz with a typical gain of 19.2dB. This device operates at a 28V test voltage and a 950mA test current, featuring LDMOS technology for high performance. Packaged in the NI-780H-2L (SOT-957A) footprint for chassis mounting, it is supplied on a Tape & Reel (TR). This component is suitable for applications in broadband wireless communication infrastructure and industrial RF power systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-957A |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 880MHz |
| Power - Output | 27W |
| Gain | 19.2dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780H-2L |
| Voltage - Rated | 68 V |
| Voltage - Test | 28 V |
| Current - Test | 950 mA |
Request a Quote
Clients Also Buy
BLF988S,112
RF MOSFET LDMOS 50V SOT539B
A2T18S165-12SR3
RF MOSFET LDMOS 28V NI780
MRF6S19200HSR5
RF MOSFET LDMOS 28V NI780
