MRF6S9060NBR1
RF MOSFET LDMOS 28V TO272-2Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF6S9060NBR1 is a high-performance LDMOS RF power transistor designed for demanding applications. This TO-272-2 packaged component operates at 880MHz, delivering 14W of output power with a typical gain of 21.4dB at a test current of 450mA and 28V drain-source voltage. The device is rated for a drain-source voltage of 68V. Its robust LDMOS technology ensures excellent efficiency and linearity, making it suitable for use in cellular infrastructure, base stations, and other wireless communication systems. The MRF6S9060NBR1 is supplied on a Tape & Reel (TR) for automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-272BC |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 880MHz |
| Power - Output | 14W |
| Gain | 21.4dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | TO-272-2 |
| Voltage - Rated | 68 V |
| Voltage - Test | 28 V |
| Current - Test | 450 mA |
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