MRF6S23100HR3
RF MOSFET LDMOS 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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The NXP USA Inc. MRF6S23100HR3 is a 20W RF power LDMOS transistor operating at 2.4GHz. This device offers a typical gain of 15.4dB at a test voltage of 28V and a test current of 1A. Designed for high-frequency applications, it features a robust LDMOS technology and is supplied in the NI-780H-2L package, suitable for chassis mounting. The MRF6S23100HR3 is commonly utilized in base station infrastructure and wireless communication systems requiring efficient RF power amplification. It is delivered on tape and reel for automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-957A |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2.4GHz |
| Power - Output | 20W |
| Gain | 15.4dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780H-2L |
| Voltage - Rated | 68 V |
| Voltage - Test | 28 V |
| Current - Test | 1 A |
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