MRF6S21190HSR3
RF MOSFET LDMOS 28V NI880SManufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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The NXP USA Inc. MRF6S21190HSR3 is a 54W RF power MOSFET utilizing LDMOS technology. This component operates within the 2.11GHz to 2.17GHz frequency range, delivering a typical gain of 16dB. Designed for surface mount applications, it is supplied in a NI-880S package, presented on tape and reel. The device is rated for a drain source voltage of 68V, with a test current of 1.6A at 28V. Its robust performance characteristics make it suitable for demanding applications in the cellular infrastructure and public mobile radio industries.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-880S |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 2.11GHz ~ 2.17GHz |
| Power - Output | 54W |
| Gain | 16dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-880S |
| Voltage - Rated | 68 V |
| Voltage - Test | 28 V |
| Current - Test | 1.6 A |
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