MRF6S21140HR3
RF MOSFET LDMOS 28V NI880HManufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF6S21140HR3 is a robust RF LDMOS transistor designed for high-power applications. This device operates at a drain voltage of 68 V with a test voltage of 28 V, delivering an output power of 30 W at a frequency of 2.12 GHz. The MRF6S21140HR3 exhibits a typical gain of 15.5 dB and a test current of 1.2 A, making it suitable for demanding wireless infrastructure and industrial applications. The component is housed in the NI-880H-2L package, also known as SOT-957A, and is supplied on a Tape & Reel (TR) for efficient automated assembly. Its LDMOS technology ensures excellent performance and reliability in challenging RF environments.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-957A |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2.12GHz |
| Power - Output | 30W |
| Gain | 15.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-880H-2L |
| Voltage - Rated | 68 V |
| Voltage - Test | 28 V |
| Current - Test | 1.2 A |
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