MRF6S21100HSR3
RF MOSFET LDMOS 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF6S21100HSR3 is a 28V, 23W LDMOS RF power MOSFET designed for high-frequency applications. This device operates within the 2.11GHz to 2.17GHz frequency band, offering a typical gain of 15.9dB at a test current of 950mA. The MRF6S21100HSR3 features the NI-780S package for efficient thermal management and is supplied in Tape & Reel (TR) packaging. Its robust design makes it suitable for demanding applications in wireless infrastructure and other high-power RF systems. The rated voltage is 68V, with a test voltage of 28V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780S |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2.11GHz ~ 2.17GHz |
| Power - Output | 23W |
| Gain | 15.9dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780S |
| Voltage - Rated | 68 V |
| Voltage - Test | 28 V |
| Current - Test | 950 mA |
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