MRF6S20010GNR1
RF MOSFET LDMOS 28V TO270-2Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF6S20010GNR1 is a 10W LDMOS RF power transistor designed for high-frequency applications. This TO-270-2 GULL packaged device operates at 28V test voltage and delivers a typical gain of 15.5dB at 2.17GHz with a 130mA test current. The MRF6S20010GNR1 is suitable for demanding RF power amplifier designs in base stations, industrial, and defense systems. Its robust LDMOS technology ensures reliable performance in challenging environments. This component is supplied in Tape & Reel packaging for automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-270BA |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 2.17GHz |
| Power - Output | 10W |
| Gain | 15.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | TO-270-2 GULL |
| Voltage - Rated | 68 V |
| Voltage - Test | 28 V |
| Current - Test | 130 mA |
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