MRF6S19200HSR5
RF MOSFET LDMOS 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF6S19200HSR5 is a 56W LDMOS RF power transistor designed for high-power applications. Operating within the 1.93GHz to 1.99GHz frequency range, this component offers a typical gain of 17.9dB. It is rated for a drain-source voltage of 66V and a test drain current of 1.6A. The MRF6S19200HSR5 utilizes LDMOS technology and is supplied in a NI-780S package, suitable for chassis mounting. This device is commonly employed in the wireless infrastructure and base station sectors. The component is provided in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780S |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 1.93GHz ~ 1.99GHz |
| Power - Output | 56W |
| Gain | 17.9dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780S |
| Voltage - Rated | 66 V |
| Voltage - Test | 28 V |
| Current - Test | 1.6 A |
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