MRF6S19200HSR3
RF MOSFET LDMOS 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF6S19200HSR3 is a high-performance RF power MOSFET utilizing LDMOS technology. This device is designed for operation within the 1.93GHz to 1.99GHz frequency band, delivering a robust 56W of output power. Tested at 28V, it exhibits a gain of 17.9dB. The MRF6S19200HSR3 is housed in a NI-780S package, suitable for chassis mounting and supplied on tape and reel for efficient manufacturing processes. This component finds application in demanding wireless infrastructure, base station, and high-power RF amplification systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780S |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 1.93GHz ~ 1.99GHz |
| Power - Output | 56W |
| Gain | 17.9dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780S |
| Voltage - Rated | 66 V |
| Voltage - Test | 28 V |
| Current - Test | 1.6 A |
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