MRF6S19140HSR3
RF MOSFET LDMOS 28V NI880SManufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF6S19140HSR3 RF power transistor, utilizing LDMOS technology, is designed for demanding RF applications. This device operates at a test voltage of 28V and features a 1.15A current rating. With a frequency range of 1.93GHz to 1.99GHz, it delivers a nominal 16dB gain and an output power of 29W. Presented in the NI-880S package, this surface-mount component is supplied on tape and reel (TR). Its robust design makes it suitable for base station infrastructure and other high-frequency communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-880S |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 1.93GHz ~ 1.99GHz |
| Power - Output | 29W |
| Gain | 16dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-880S |
| Voltage - Rated | 68 V |
| Voltage - Test | 28 V |
| Current - Test | 1.15 A |
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