MRF6S19060NBR1
FET RF 68V 1.93GHZ TO272-4Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF6S19060NBR1 is a high-power RF FET designed for demanding wireless infrastructure applications. This discrete semiconductor component operates at 68V and a frequency of 1.93GHz, making it suitable for power amplifier stages in base stations and other cellular communication systems. Encased in a TO272-4 package, it offers robust thermal performance and ease of integration into high-density circuit designs. Its advanced silicon LDMOS technology ensures excellent linearity and efficiency for reliable signal transmission. The MRF6S19060NBR1 is a key component for achieving high performance and reliability in 3G and 4G/LTE base station power amplifiers, contributing to the backbone of modern telecommunications.
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Series: RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: BulkDownload Free CAD Model:
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