Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

RF FETs, MOSFETs

MRF6S18060NR1

Banner
productimage

MRF6S18060NR1

RF MOSFET LDMOS 26V TO270-4

Manufacturer: NXP USA Inc.

Categories: RF FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. MRF6S18060NR1 is a 60W LDMOS RF power transistor designed for high-frequency applications. Operating at 1.99 GHz, this TO-270 WB-4 packaged device offers a 15dB gain and a 26V test voltage with a 600mA test current. The MRF6S18060NR1 leverages LDMOS technology to deliver robust performance in demanding RF power amplification. It is commonly utilized in base station infrastructure and other high-power RF systems. The part is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-270AB
Current Rating (Amps)-
Mounting TypeSurface Mount
Frequency1.99GHz
Power - Output60W
Gain15dB
TechnologyLDMOS
Noise Figure-
Supplier Device PackageTO-270 WB-4
Voltage - Rated68 V
Voltage - Test26 V
Current - Test600 mA

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
MRF6S19200HSR5

RF MOSFET LDMOS 28V NI780

product image
MRF6V2010NBR1

RF MOSFET LDMOS 50V TO272-2

product image
MRF1513NT1

RF MOSFET LDMOS 12.5V PLD-1.5