MRF6P3300HR5
RF MOSFET LDMOS 32V NI860C3Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF6P3300HR5 is an RF power MOSFET utilizing LDMOS technology. This device is designed for high-power RF applications, operating within the 857MHz to 863MHz frequency band. It delivers a significant 270W of output power with a tested drain current of 1.6A. The MRF6P3300HR5 offers a gain of 20.2dB, making it suitable for demanding RF amplification stages. Key specifications include a rated voltage of 68V and a test voltage of 32V. The component is supplied in the NI-860C3 package and is available on tape and reel (TR). Applications for this component are found in base station infrastructure and other high-power RF systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-860C3 |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 857MHz ~ 863MHz |
| Power - Output | 270W |
| Gain | 20.2dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-860C3 |
| Voltage - Rated | 68 V |
| Voltage - Test | 32 V |
| Current - Test | 1.6 A |