MRF6P3300HR3
RF MOSFET LDMOS 32V NI860C3Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF6P3300HR3 is a high-power RF LDMOS transistor designed for demanding applications. This device operates within the 857MHz to 863MHz frequency range, delivering a nominal output power of 270W. It exhibits a typical gain of 20.2dB at a test current of 1.6A and a test voltage of 32V. The MRF6P3300HR3 is housed in the NI-860C3 package, a robust chassis mount configuration, and is supplied on tape and reel. This RF power transistor is suitable for use in base station infrastructure and other wireless communication systems requiring efficient and reliable RF amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-860C3 |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 857MHz ~ 863MHz |
| Power - Output | 270W |
| Gain | 20.2dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-860C3 |
| Voltage - Rated | 68 V |
| Voltage - Test | 32 V |
| Current - Test | 1.6 A |