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MRF6P27160HR6

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MRF6P27160HR6

RF MOSFET LDMOS 28V NI1230

Manufacturer: NXP USA Inc.

Categories: RF FETs, MOSFETs

Quality Control: Learn More

The NXP USA Inc. MRF6P27160HR6 is a 28V RF LDMOS transistor designed for high-power applications. Featuring a 1.8A test current and delivering 35W of output power at 2.66GHz, this device offers a 14.6dB gain. Its NI-1230 package is suitable for chassis mounting, and it is supplied on tape and reel. This component is utilized in demanding wireless infrastructure and high-frequency power amplification systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseNI-1230
Current Rating (Amps)-
Mounting TypeChassis Mount
Frequency2.66GHz
Power - Output35W
Gain14.6dB
TechnologyLDMOS
Noise Figure-
Supplier Device PackageNI-1230
Voltage - Rated68 V
Voltage - Test28 V
Current - Test1.8 A

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