MRF5S9100NBR1
RF MOSFET LDMOS 26V TO272-4Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF5S9100NBR1 is an RF LDMOS power transistor designed for high-efficiency applications. This component operates at 880MHz, delivering 20W of output power with a typical gain of 19.5dB. Key specifications include a 26V test voltage and a 950mA test current. The device is housed in a TO-272 WB-4 package, suitable for chassis mounting. Its robust LDMOS technology ensures excellent performance in demanding RF power amplifier designs. Commonly utilized in wireless infrastructure and base station equipment, this transistor offers reliable power amplification for critical communication systems. Packaged on Tape & Reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-272BB |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 880MHz |
| Power - Output | 20W |
| Gain | 19.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | TO-272 WB-4 |
| Voltage - Rated | 68 V |
| Voltage - Test | 26 V |
| Current - Test | 950 mA |
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