MRF5S9080NBR1
RF MOSFET LDMOS 26V TO272-4Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF5S9080NBR1 is a high-power RF LDMOS transistor designed for demanding applications. This TO-272 WB-4 packaged device offers 80W of output power at 960MHz, with a typical gain of 18.5dB. It operates with a drain-source voltage of 26V during testing and a rated voltage of 65V. The MRF5S9080NBR1 is suitable for use in industrial, medical, and defense systems requiring robust RF amplification. Its LDMOS technology ensures excellent performance and reliability in challenging operating environments. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-272BB |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 960MHz |
| Power - Output | 80W |
| Gain | 18.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | TO-272 WB-4 |
| Voltage - Rated | 65 V |
| Voltage - Test | 26 V |
| Current - Test | 600 mA |
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