MRF282ZR1
RF MOSFET LDMOS 26V NI200Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. MRF282ZR1 is a high-performance RF power transistor designed for demanding wireless applications. This LDMOS device operates at 2GHz, delivering 10W of output power with 11.5dB of gain at a 26V test voltage and 75mA test current. The MRF282ZR1 features a robust NI-200Z package, suitable for chassis mounting and designed for thermal efficiency. Its advanced LDMOS technology ensures excellent linearity and ruggedness, making it ideal for base station infrastructure, point-to-point radio, and other high-frequency communication systems. Supplied on tape and reel, this component offers efficient integration into automated manufacturing processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-200Z |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2GHz |
| Power - Output | 10W |
| Gain | 11.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-200Z |
| Voltage - Rated | 65 V |
| Voltage - Test | 26 V |
| Current - Test | 75 mA |
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