MRF282SR1
RF MOSFET LDMOS 26V NI200Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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The NXP USA Inc. MRF282SR1 is a high-performance RF LDMOS transistor designed for demanding applications. This component operates at 2GHz, delivering 10W of output power with a typical gain of 11.5dB at a test voltage of 26V and 75mA test current. Featuring LDMOS technology, it provides robust performance and efficiency. The MRF282SR1 is housed in a NI-200S package, suitable for chassis mounting, and is supplied on a Tape & Reel (TR) for automated assembly. This device is commonly utilized in industrial, medical, and defense sectors requiring reliable RF power amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-200S |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2GHz |
| Power - Output | 10W |
| Gain | 11.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-200S |
| Voltage - Rated | 65 V |
| Voltage - Test | 26 V |
| Current - Test | 75 mA |
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