MRF281ZR1
RF MOSFET LDMOS 26V NI200Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF281ZR1 is a 4W RF LDMOS power transistor operating at 1.93GHz with a typical gain of 12.5dB. This device is designed for high-power applications requiring robust performance. It features a 26V test voltage and a 25mA test current, with a rated voltage of 65V. The MRF281ZR1 is supplied in the NI-200Z package, suitable for chassis mounting and delivered on tape and reel. Its LDMOS technology ensures high efficiency and reliability in demanding RF systems. This component is commonly utilized in base station infrastructure and other professional radio communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-200Z |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 1.93GHz |
| Power - Output | 4W |
| Gain | 12.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-200Z |
| Voltage - Rated | 65 V |
| Voltage - Test | 26 V |
| Current - Test | 25 mA |
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