MRF281SR1
RF MOSFET LDMOS 26V NI200Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF281SR1 is a high-performance RF LDMOS transistor designed for demanding applications. This device operates at 1.93GHz, delivering a 4W output power with a 12.5dB gain at a 26V test voltage and 25mA test current. Engineered with LDMOS technology, it is packaged in the NI-200S configuration and supplied on tape and reel. The MRF281SR1 is suitable for use in base station infrastructure and public mobile radio systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-200S |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 1.93GHz |
| Power - Output | 4W |
| Gain | 12.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-200S |
| Voltage - Rated | 65 V |
| Voltage - Test | 26 V |
| Current - Test | 25 mA |
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