MRF24G300HS-2UP
RF MOSFET GAN 48V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF24G300HS-2UP is a high-power Gallium Nitride (GaN) RF MOSFET designed for demanding applications. This device operates across the 2.4 GHz to 2.5 GHz frequency band, delivering a power output of 336W with a typical gain of 15.3dB. Engineered for robust performance, it features a 48V test voltage and a 125V rated voltage, housed in the NI-780S-4L surface-mount package. Its advanced GaN technology provides superior efficiency and linearity, making it suitable for base station infrastructure, industrial heating, and aerospace and defense systems. The MRF24G300HS-2UP is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | NI-780S-4L |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 2.4GHz ~ 2.5GHz |
| Power - Output | 336W |
| Gain | 15.3dB |
| Technology | GaN |
| Noise Figure | - |
| Supplier Device Package | NI-780S-4L |
| Voltage - Rated | 125 V |
| Voltage - Test | 48 V |
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