MRF24G300HR5
RF MOSFET GAN 48V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. MRF24G300HR5 is a high-power RF MOSFET designed for demanding wireless applications. This GaN-based device operates across the 2.4 GHz to 2.5 GHz frequency band, delivering an impressive 300W of output power with a typical gain of 15.2dB. Engineered for robust performance, it features a 48V test voltage and a 125V rated voltage, ensuring reliable operation in challenging environments. The MRF24G300HR5 is packaged in a NI-780-4 case, supplied on tape and reel for efficient manufacturing processes. Its technology enables superior efficiency and linearity, making it suitable for base stations, radar systems, and other high-frequency power amplification stages.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780-4 |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2.4GHz ~ 2.5GHz |
| Configuration | 2 N-Channel |
| Power - Output | 300W |
| Gain | 15.2dB |
| Technology | GaN |
| Noise Figure | - |
| Supplier Device Package | NI-780-4 |
| Voltage - Rated | 125 V |
| Voltage - Test | 48 V |
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