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MRF21030LR3

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MRF21030LR3

RF MOSFET LDMOS 28V NI400

Manufacturer: NXP USA Inc.

Categories: RF FETs, MOSFETs

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The NXP USA Inc. MRF21030LR3 is an RF LDMOS power transistor designed for demanding applications. This device operates at 2.14 GHz, delivering a 30W output power with a 13dB gain. It is rated for 65V with a test voltage of 28V and a typical drain current of 250mA. The MRF21030LR3 utilizes LDMOS technology for high performance and robust operation. Its NI-400 package is suitable for chassis mounting. This component finds application in wireless infrastructure and other high-frequency communication systems. The device is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Download Free CAD Model:Link image
Technical Details:
PackagingTape & Reel (TR)
Package / CaseNI-400
Current Rating (Amps)-
Mounting TypeChassis Mount
Frequency2.14GHz
Power - Output30W
Gain13dB
TechnologyLDMOS
Noise Figure-
Supplier Device PackageNI-400
Voltage - Rated65 V
Voltage - Test28 V
Current - Test250 mA

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