MRF21030LR3
RF MOSFET LDMOS 28V NI400Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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The NXP USA Inc. MRF21030LR3 is an RF LDMOS power transistor designed for demanding applications. This device operates at 2.14 GHz, delivering a 30W output power with a 13dB gain. It is rated for 65V with a test voltage of 28V and a typical drain current of 250mA. The MRF21030LR3 utilizes LDMOS technology for high performance and robust operation. Its NI-400 package is suitable for chassis mounting. This component finds application in wireless infrastructure and other high-frequency communication systems. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-400 |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2.14GHz |
| Power - Output | 30W |
| Gain | 13dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-400 |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 250 mA |
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