MRF21010LSR1
RF MOSFET LDMOS 28V NI360Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF21010LSR1 is an LDMOS RF power transistor designed for high-frequency applications. This component operates at 2.17GHz, delivering an output power of 10W with a typical gain of 13.5dB. It is rated for a voltage of 65V, with testing conducted at 28V and a nominal current of 100mA. The NI-360S package is suitable for chassis mounting, facilitating efficient thermal management in demanding environments. This RF FET is commonly utilized in base station infrastructure and other high-power RF systems. The component is supplied on a Tape & Reel (TR) for automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-360S |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2.17GHz |
| Power - Output | 10W |
| Gain | 13.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-360S |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 100 mA |