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MRF21010LSR1

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MRF21010LSR1

RF MOSFET LDMOS 28V NI360

Manufacturer: NXP USA Inc.

Categories: RF FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. MRF21010LSR1 is an LDMOS RF power transistor designed for high-frequency applications. This component operates at 2.17GHz, delivering an output power of 10W with a typical gain of 13.5dB. It is rated for a voltage of 65V, with testing conducted at 28V and a nominal current of 100mA. The NI-360S package is suitable for chassis mounting, facilitating efficient thermal management in demanding environments. This RF FET is commonly utilized in base station infrastructure and other high-power RF systems. The component is supplied on a Tape & Reel (TR) for automated assembly processes.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseNI-360S
Current Rating (Amps)-
Mounting TypeChassis Mount
Frequency2.17GHz
Power - Output10W
Gain13.5dB
TechnologyLDMOS
Noise Figure-
Supplier Device PackageNI-360S
Voltage - Rated65 V
Voltage - Test28 V
Current - Test100 mA

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