Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

RF FETs, MOSFETs

MRF19125R5

Banner
productimage

MRF19125R5

INTEGRATED CIRCUITS (ICS) MRF19125R5

Manufacturer: NXP USA Inc.

Categories: RF FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. MRF19125R5 is a high-power RF MOSFET designed for demanding applications. This electronic component operates as a Metal-Oxide-Semiconductor Field-Effect Transistor, specifically engineered for radio frequency power amplification. The MRF19125R5 offers robust performance characteristics suitable for telecommunications infrastructure, industrial heating, and defense systems. Its advanced design ensures efficient power handling and linearity, critical for maintaining signal integrity in high-frequency environments. Packaged in a tray for efficient handling and integration into manufacturing processes, this NXP component is a reliable choice for advanced RF power amplifier designs.

Additional Information

Series: RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: Tray
Technical Details:

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
MRF6S19200HSR5

RF MOSFET LDMOS 28V NI780

product image
MRF1513NT1

RF MOSFET LDMOS 12.5V PLD-1.5

product image
AFG24S100HR5

RF MOSFET LDMOS NI360