MRF19090SR3
RF MOSFET LDMOS 26V NI880SManufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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The NXP USA Inc. MRF19090SR3 is a high-power RF LDMOS transistor designed for demanding wireless infrastructure applications. This device operates at 1.93 GHz, delivering 90W of output power with a typical gain of 11.5dB. Engineered for robust performance, it features a 26V test voltage and a 750mA test current. The MRF19090SR3 utilizes LDMOS technology for efficient power amplification. It is supplied in the NI-880S package, suitable for surface mounting and provided in tape and reel packaging. This component is integral to base station equipment and other high-frequency power amplification systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-880S |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 1.93GHz |
| Power - Output | 90W |
| Gain | 11.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-880S |
| Voltage - Rated | 65 V |
| Voltage - Test | 26 V |
| Current - Test | 750 mA |
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