MRF18090AR3
RF MOSFET LDMOS 26V NI880HManufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF18090AR3 is a high-power RF LDMOS transistor designed for demanding wireless infrastructure applications. This device offers 90W of output power at 1.81GHz with a gain of 13.5dB. It operates with a 26V test voltage and a rated voltage of 65V, supporting a 750mA test current. The MRF18090AR3 utilizes LDMOS technology for robust performance and efficiency. Packaged in the NI-880H-2L (SOT-957A) footprint, it is supplied on tape and reel for automated assembly. Its specifications make it suitable for base station amplifiers and other high-frequency power amplifier designs in the telecommunications and broadcast industries.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-957A |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 1.81GHz |
| Power - Output | 90W |
| Gain | 13.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-880H-2L |
| Voltage - Rated | 65 V |
| Voltage - Test | 26 V |
| Current - Test | 750 mA |