MRF18060ALR3
RF MOSFET LDMOS 26V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF18060ALR3, an RF power MOSFET utilizing LDMOS technology, is engineered for high-power applications. This device operates across the 1.81GHz to 1.88GHz frequency band, delivering a robust 60W of output power with a typical gain of 13dB. It is rated for a drain-source voltage of 65V and is tested at 26V with a 500mA drain current. The MRF18060ALR3 is supplied in the NI-780H-2L package, featuring a Chassis Mount for efficient thermal management. This component is commonly found in wireless infrastructure and land mobile radio systems. It is provided in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-957A |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 1.81GHz ~ 1.88GHz |
| Power - Output | 60W |
| Gain | 13dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780H-2L |
| Voltage - Rated | 65 V |
| Voltage - Test | 26 V |
| Current - Test | 500 mA |
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