MRF1550FNT1
RF MOSFET LDMOS 12.5V TO272-6Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF1550FNT1 is a high-power RF LDMOS transistor designed for demanding applications. This device operates at 175MHz with a typical output power of 50W and a gain of 14.5dB, achieved at a drain voltage of 12.5V and a drain current of 500mA. It features a 12A current rating. The MRF1550FNT1 is housed in a TO-272-6 package, suitable for chassis mounting. Its LDMOS technology ensures excellent performance in high-frequency power amplification. This component is widely utilized in industrial, communication infrastructure, and broadcast transmitter applications. The device is supplied on Tape & Reel (TR).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-272BA |
| Current Rating (Amps) | 12A |
| Mounting Type | Chassis Mount |
| Frequency | 175MHz |
| Power - Output | 50W |
| Gain | 14.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | TO-272-6 |
| Voltage - Rated | 40 V |
| Voltage - Test | 12.5 V |
| Current - Test | 500 mA |
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